Process of fabricating dynamic random access memory device having storage capacitor low in contact resistance and small in leakage current through tantalum oxide film

摘要

When tantalum oxide is used for a dielectric film of a stacked type storage capacitor forming a memory cell together with a switching transistor, heat treatments are limited to 530 degrees centigrade in the stages after the deposition of the tantalum oxide, and leakage current across the tantalum oxide is drastically decreased.