| 摘要 |
PROBLEM TO BE SOLVED: To ensure operational stability of a capacitor by depositing a first hemispherical grains film in a first substance layer pattern and a second hemispherical grains film of different surface area in a second substance layer pattern and then subjecting the grains films to a heat treatment process or an ion implantation process. SOLUTION: A first substance layer 50 is formed on the entire surface of an interlayer insulator 44 while filling a contact hole 48 and then a second substance layer 52 is formed on the entire surface of the first substance layer 50. The first and second substance layers 50, 52 are then subjected to anisotropic etching using a second photoresist pattern 54 as an etching mask and the surface of the interlayer insulator 44 as the ending point of etching. A semiconductor substrate 40, on which the first and second substance layers are formed, is then loaded in a hot well type reaction chamber under vacuum state and a specified quantity of silane or disilane gas is fed under substantially constant temperature. Subsequently, it is annealed at a substantially constant temperature for a predetermined time. Finally, it is subjected to a heat treatment process or an ion implantation process. |
