| 摘要 |
PROBLEM TO BE SOLVED: To reduce dislocation density of gallium nitride crystal and enable cleavage. SOLUTION: After a silicon carbide thin film 2 and gallium nitride crystal 3 are formed in order on a silicon substrate 1, it is only eliminated in acid solution like mixed solution of hydrofluoric acid and nitric acid. Second gallium nitride crystal 4 is formed on the left silicon carbide 2 and gallium nitride 3. A second semiconductor thin film and gallium nitride crystal are formed on the semiconductor substrate, and it is eliminated before or after the gallium nitride crystal is formed, thereby forming gallium nitride crystal which has low dislocation density and is capable of cleavage. |
