RESIST PATTERN EVALUATING METHOD AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technique capable of making simple and quantitative evaluation of particularly the skirt parts in executing the shape evaluation of resist patterns. SOLUTION: A resist film 3 is formed on a semiconductor substrate 1 by applying a chemical amplification type resist thereon and is then subjected to exposure 4 using a KrF excimer layer stepper. The exposed parts are irradiated with monitor light 6 and are subjected to development processing while the scattered light is monitored, by which the distribution of the dissolution rate with respect to the depth of the resist film is measured. The quantization of the skirting shape of the resist patterns is made possible by calculating the ratio of the dissolution rates in the bottom of the resist film and the points exclusive thereof. In the case the production of the device is actually executed, the dissolution rate of the resist is measured before the pattern formation is executed, by which the pattern defect is predicted and the remedy for adequate prevention of the skirting is taken for the actual substrate.