Method of chemically mechanically polishing an electronic component using a non-selective ammonium persulfate slurry

摘要

A method of forming metal patterns in an insulating layer on a semiconductor wafer. After Chem-Mech Polishing (CMP) the insulating layer and forming studs in a planarized insulating layer, the polished surface is chem-mech polished with a touch-up slurry. The touch-up slurry has a nearly identical removal rate for the stud material (tungsten or titanium) as for the insulating material (SiO2). The preferred non-selective slurry is fumed colloidal silica, 8% by weight, and 20 g/l ammonium persulfate.