| 摘要 |
PROBLEM TO BE SOLVED: To obtain a resist pattern having high sensitivity and high resolution by forming a thin film resist. SOLUTION: An electron beam resist 3 is formed to 280 to 350nm thickness on a blank mask consisting of a transparent substrate 1 and a chromium film 2 having 60 to 70nm film thickness as a light-shielding film on the substrate 1. Then the resist 3 is subjected to electron beam drawing and developed for patterning. Then the chromium film 2 is etched by using the patterned resist 3 as a mask. |
