发明名称 SUBSTRATE FOR VAPOR PHASE GROWTH AND ITS HEATING
摘要 PROBLEM TO BE SOLVED: To attain efficient reception of thermal radiation from a heater by a substrate and uniform heating on the substrate, in vapor phase growth on light translucent and insulating material such as sapphire. SOLUTION: Substrates 10 and 15 comprise a wafer 11 which is substantially transparent to radiation and a thin film, formed in close contact with one main surface of the wafer 11, as a substantial absorber to the radiation. Heat occurred in the thin film by the radiation is transmitted to the wafer 11, to heat the wafer 11. Otherwise, the substrates comprise an electrically insulating wafer 11 and a thin film, formed in close contact with one main surface of the wafer 11, having electrical conductivity. Heat occurred in the thin film by induction heating is transmitted to the wafer 11, to heat the wafer 11.
申请公布号 JPH1070313(A) 申请公布日期 1998.03.10
申请号 JP19960225159 申请日期 1996.08.27
申请人 TOSHIBA CORP 发明人 KAMAKURA TAKANOBU
分类号 H01L21/02;H01L21/205;H01L33/32 主分类号 H01L21/02
代理机构 代理人
主权项
地址