发明名称 Semiconductor device having a minute contact hole
摘要 A contact structure includes a depression formed in an insulation layer covered by an etching resistant layer and a through hole provided in the depression, wherein a ring-shaped wall member is provided on the depression such that the space formed inside the ring-shaped wall member continues to the through hole. The ring-shaped wall member is formed of a material having an etching rate different from the material forming insulation layer or the etching resistant layer.
申请公布号 US5726499(A) 申请公布日期 1998.03.10
申请号 US19960681221 申请日期 1996.07.22
申请人 RICOH COMPANY, LTD. 发明人 IRINODA, MITSUGU
分类号 H01L21/768;H01L23/485;H01L23/522;(IPC1-7):H01L23/48 主分类号 H01L21/768
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