PRODUCTION OF SILICON SINGLE CRYSTAL SUBSTRATE FOR VAPOR PHASE GROWTH

摘要

PROBLEM TO BE SOLVED: To suppress the effect of auto-doping while preventing generation of nodule effectively by removing the part of an oxide or a nitride deposited by CVD on the side face and spread to the major surface side of a silicon single crystal substrate through tape polishing and then mirror polishing the major surface of the substrate. SOLUTION: An oxide or a nitride 11 is deposited by CVD on the rear surface and the side face of a silicon single crystal substrate 10. When the CVD film 11 is deposited by CVD on a beveled substrate 10, it is also deposited on the major surface 10a side at the beveled part. The part deposited on the major surface 10a side at the beveled part is then removed by means of a tape polishing machine. The substrate 10 from which the oxide or nitride 11 deposited on the major surface 10a side is removed is then subjected, on the major surface thereof, to mirror polishing thus producing a silicon single crystal substrate for vapor phase growth. According to the method, nodule is not generated at all and auto-doping can be prevented substantially.