| 摘要 |
PROBLEM TO BE SOLVED: To obtain an ion-doping device which has a small variations in the ion producing amount, which respect to the gas density variation following the gas cylinder exchange and the like, and has high accuracy, high performance, and good reproductivity. SOLUTION: By composing a processing chamber inner wall 5a of by a metallic material polished with the surface roughness of more than 50μm, the adsorbed gas is increased, and a condition attaching a large amount of dopant ions is formed. In such a condition, the producing amount of various sorts of ions is made in the condition, mainly of the ionized dopant elements generated by the impact of the gas exhausted from an ion source 1 and the processing chamber inner wall 5a, and the plasma and the ions, and no large effect is given any longer to the density of the dopant gas starting its use newly, so as to obtain an ion-doping device which can carry out the ion-doping process of good reproductivity and stability. In this case, it is also effective to cover the processing chamber inner wall 5a by a material with a large gas adsorbing property, or to form an uneven surface thereon.
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