| 摘要 |
PROBLEM TO BE SOLVED: To provide a film of low Ga concentration and high quality with a large band gap matching solar ray spectrum, by using [Cu2 (Sz Se1-z )]x [(In1-y Gay )2 (Sz Se1-z )3 ]1-x compound containing group Ia element. SOLUTION: [Cu2 (Sz Se1-z )]x [(In1-y Gay )2 (Sz Se1-x )3 ]1-x compound containing a group Ia element, with 0.16<=x<=0.34, 0.05<=y<=0.55, 0<=z<=1.0, is used. For example, a substrate holder 2 and a tantalum heater 3 for heating a substrate are provided in a vacuum vessel 1, and on an aluminum substrate 4 coated with an Mo film 5, vapor-deposition is performed using an Na2 S 12 which is a vapor-deposition source of Ia group. A Cu(In0.8 Ga0.2 )3 Se5 thin film 6, where x=0.25, y=0.2, and z=0, is formed by about 2μm thereon. At that time, simultaneous vapor-deposition is performed with each element by using a Cu vapor- deposition source 8, an In vapor-source 9, A Ga vapor-deposition source 10, and an Se vapor-deposition source 11. |
