| 摘要 |
PROBLEM TO BE SOLVED: To prevent sodium and oxygen from entering non-single crystal semiconductor, while vapor-phase reaction equipment is used as it is, by setting the concentration of sodium and oxygen in the non-single crystal semiconductor to a specified value, in the lowest concentration region of secondary ion mass spectrometric analysis. SOLUTION: Decrease in the conversion efficiency as a photoelectric transducer can be prevented, as the concentration of sodium and oxygen, in particular, sodium as impurities are further reduced. Reliability is improved and the impurity concentration of sodium and oxygen is made to be most 5×10<18> cm<-3> . Sodium-eliminating treatment is performed not only to a glass substrate 10 on which a coating film is formed but also to a quartz part member in the vicinity of a coating film forming region in a vapor-phase reaction equipment 1. Thereby a non-single crystal semiconductor, wherein the concentration of sodium is extremely low and whose main component is silicon doped with hydrogen or halogen element can be formed. |
