| 摘要 |
PROBLEM TO BE SOLVED: To prevent an etchant used for the removal of an adjacent sacrifice area from flowing into an active matrix by setting an iso-cutting area so as to be situated on the adjacent sacrifice area. SOLUTION: When a second thin film layer is iso-cut into M×N arrays of a second thin film electrode 265 by dry etching, the iso-cutting area 295 of the second thin film layer is set so as to be situated on a sacrifice area 340. Thus, since the cutting area 295 is situated on the adjacent sacrifice area 340 in the formation of an incomplete mirror structure 350, an etchant inflow preventing layer 230 is never damaged when a patterning is performed in the cutting area 295, and the etchant is carried only into the sacrifice area 340 when the adjacent sacrifice area 340 is removed, so that it never acts on a passivation layer 220 and an active matrix 210 situated under it.
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