| 摘要 |
PROBLEM TO BE SOLVED: To obtain a plasma CVD insulating film whose relative dielectric constant is made low and whose moisture resistance is enhanced, by a method wherein silicon is used as a main material, the concentration of fluorine is set in a specific range and the concentration of carbon is set in a specific range. SOLUTION: O2 in 75 to 100SCCM is introduced into a plasma chamber 7 from a first nozzle 1. SiH4 in 40 to 50SCCM, CF4 in 10 to 20SCCM, Ar in 0 to 100SCCM and CO2 in 5 to 10SCCM are introduced respectively into a reaction chamber 6 from a second nozzle 2. By their introduction, silicon is used as a main material, the concentration of fluorine is controlled independently to a range of 4×10<21> to 1.0×10<22> atoms/cc, and the concentration of carbon is controlled independently to a range of 3.0×10<19> to 1.0×10<21> atoms/cc. Thereby, it is possible to obtain a plasma CVD insulating film whose relative dielectric constant can be made low and which is moisture-resistant.
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