| 摘要 |
PROBLEM TO BE SOLVED: To obtain a negative type photoresist capable of forming a fine pattern. SOLUTION: This photoresist compsn. contains novolak type epoxy resin having a wt. average mol.wt. of 1,500-10,000 (expressed in terms of standard polystyrene) and represented by formula I and a photopolymn. initiator represented by formula II and initiating cationic polymn. under irradiation with UV. The amt. of the initiator is 5-30 pts.wt. per 100 pts.wt. of the epoxy resin. In the formula I, R is H or methyl, (1) is an integer of 0-3 and each of (m) and (n) is an integer of >=0 satisfying the wt. average mol.wt. of the epoxy resin. In the formula II, each of R1 and R2 is H, 1-4C alkyl or alkoxy, R3 is H, morpholino or an arom. group, M is a metal or metalloid, X is halogen, (a) is an integer of 1-6, a=(b-c), (c) is an integer of 2-7 equivalent to the valence of M, (b) is an integer of <=8 and b>c. |
