| 摘要 |
PROBLEM TO BE SOLVED: To form aluminum nitride which is not converted into aluminum oxide and to impart the aluminum nitride with an antireflection effect against exposure light by, after forming an aluminum alloy wiring on a semiconductor substrate, forming an aluminum nitride film on the surface of it. SOLUTION: Afrer an aluminum alloy wiring 13 is formed on a semiconductor substrate 11, an aluminum nitride film 15 is formed on the surface of the aluminum alloy wiring 13. For example, after the aluminum film 13 is formed on a BBSG film 12 on the silicon substrate 11, while the substrate 11 is heated to 200 deg.C or above, the surface of the aluminum film 13 is plasma-processed with a mixed gas 14 of nitrogen and hydrogen. As a result, the aluminum nitride layer 15 is formed. Formation conditions of the aluminum nitride layer 15 are, for example, plasma irradiation period 0.5-1 hour, nitrogen:hydrogen=75:25, mixed gas flow rate = 24SCCM, pressure = 24 × 10<-4> Torr, heating period = 1 hour at 250 deg.C, and film thickness = 30nm. |
