| 摘要 |
PROBLEM TO BE SOLVED: To improve productivity when two or more kinds of such additive processes as formation of gettering area are performed, formation of a dopant evaporation-prevention protective film and oxygen donor erasing thermal process by performing two or more processes among processes in the same device. SOLUTION: Each of processes such as oxygen donor erasing thermal process, formation of gettering area and formation of a dopant evaporation-prevention film is selectively performed based on the specifications of the silicon mirror- finish wafer which is to be manufactured. In such a case, two or more processes among the work processes are performed in the same device according to the specifications. For example, two or more process chambers 11-14, selected among a process chamber for forming the gettering area, a process chamber for forming the dopant evaporation prevention protective film, and a process chamber for oxygen donor erasing thermal process, are provided. In addition, a processing device is used wherein, with a transportation means 15 for transporting a silicon wafer into each of process chambers 11-14 provided, the process chambers 11-14 can be operated at the same time. |
