| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability by eliminating occurring of residue when a resist is removed. SOLUTION: A base-material oxide film 21 is formed on a substrate 20, and as a resist acting as a mask for ion implantation, 2-layer structure of a negative resist 22 and a positive resist 23 is formed over it, then, high-dose ion implantation 24 is performed. Then the positive resist 23 is removed by ashing. Then, the negative resist 22 is removed by such wet method as sulfuric acid hydrolysis. |
