| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting device which is high in electrostatic resistance and easily handled. SOLUTION: An n conductivity-type first semiconductor layer 3, a light- emitting layer 4, and a p conductivity-type second semiconductor layer 5 are successively laminated for the formation of a light-emitting device 10, where a first electrode 7 connected to the first semiconductor layer 3 is brought into contact with the second semiconductor layer 5. By this setup, when a reverse high voltage is applied to the light-emitting device 10, a current flows preferentially from the first electrode 7 to the second semiconductor layer 5, and no current flows through the light-emitting device 10. Therefore, even if an electrostatic voltage of opposite polarity is applied to the light-emitting device 10, it will causes no damage to the device 10, so that the light-emitting device 10 can be easily handled. A resistor may be provided between the first electrode 7 and the second semiconductor layer 5. Or a diode, opposite in polarity to the light-emitting device 10, may be provided between the first electrode 7 and the second electrode 8, in parallel with the device 10. |
