| 摘要 |
PROBLEM TO BE SOLVED: To provide a device for achieving high-frequency characteristics, moisture resistance, and high reliability. SOLUTION: A semiconductor device where an active layer 2 including a channel region is formed at the surface part of a semiconductor chip 11 has a fluorine resin film 11 that is formed to cover at least the active layer 2, a polyimide resin film 12 that is formed to cover at least the peripheral part of the semiconductor chip 11, and an epoxy resin film 13 that is formed to cover the entire surface of the semiconductor chip 11. At this time, ε1<=ε2<=ε3 is established among dielectric constants ε1, ε2, and ε3 of the resin films 11, 12, and 13. Therefore, the semiconductor device has improved high-frequency characteristics since the active layer 2 is covered with the fluorine resin film 11 with a low dielectric constant and has a high moisture resistance since the epoxy resin film that cannot be peeled between other materials and has improved stabilization of ink is formed at a peripheral part, and no ink flows to the surrounding, thus improving reliability. |
