发明名称 LOCAL CHARGE PUMP CIRCUIT OF NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To secure a sufficient program voltage margin irrespective of a source voltage, by setting a switching voltage stabilization circuit. SOLUTION: A switching voltage stabilization circuit is composed of an inverter 112 and a capacitor 113, discharging a node 111 while a clock pulse signal OP output from an oscillator 101 maintains a source voltage level. The stabilization circuit charges the node 111 while the clock pulse signal OP maintains a ground voltage level so that a switching voltage on the mode 111 is kept in a constant size. A sufficient high voltage necessary for programming is obtained irrespective of a change of a source voltage, and therefore a sufficient program voltage margin is secured.</p>
申请公布号 JPH1064291(A) 申请公布日期 1998.03.06
申请号 JP19970125105 申请日期 1997.05.15
申请人 SAMSUNG ELECTRON CO LTD 发明人 RI KISHO
分类号 G11C16/06;G11C5/14;(IPC1-7):G11C16/06 主分类号 G11C16/06
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