| 摘要 |
PROBLEM TO BE SOLVED: To form a position detecting mark by using a semiconductor crystal layer which is selectively grown on a pattern on an exposed semiconductor main face by using a protective layer having an opening as a mask. SOLUTION: A protective film 7 is deposited on a substrate 1 by a chemical vapor deposition method, and further, a photoresist film 8 is deposited. An opening 9 is formed by using a position detecting mark 5 and the protective film 7 is etched by using the photoresist film 8 as a mask. The photoresist film 8 is removed and an opening 10 is formed. A first crystal layer is selectively grown on the substrate 1 covered with the protective film 7 having the opening 10. In the opening 10 part, a first crystal layer 11 is grown. On the protective layer 7, a polycrystal film 12 is grown. On the position detecting mark 5, a crystal 51 having the same shape as that of the base is selectively grown. Consequently, the selectively grown crystal layer and the position detecting mark having the same height as that of the crystal layer are simultaneously selectively grown. |
