| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the exposure area, without enlarging the exposure optical system, by forming the exposure optical systems having the same reduction scale factor so that the optical axis of the illuminating light is parallel to that of the exposure light, and illumination range and exposure range are shifted around a center axis of symmetry. SOLUTION: Each of exposure optical systems having the same reduction scale factorβis formed so that the optical axis of the illuminating light is parallel to that of the exposure light, and illumination range and exposure range projected on a projection plane perpendicular to these optical axes are mutually shifted around a center axis of symmetry. The illuminating ranges T1 -T6 are reduced with center at this center axis of symmetry to thereby superpose the exposure ranges t1 -t6 . A reticle and wafer are mutually parallel scanned at a scan ratio according to the scale factorβto expose it in a direction perpendicular to the scanning.
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