In a process for smoothening a substrate surface with level differences caused by metallic structures, a metallic layer made of a titanium compound is first applied on the surface and the side faces of the metallic structures before O3-activated separation of SiO2 or SiOF from a silicium precursor stage on the substrate surface provided with the metallic structures.
申请公布号
WO9809326(A1)
申请公布日期
1998.03.05
申请号
WO1997EP04697
申请日期
1997.08.28
申请人
SIEMENS AKTIENGESELLSCHAFT;FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DER ANGEWAND;GRASSL, THOMAS;GABRIC, ZVONIMIR;SPINDLER, OSWALD