发明名称 Method of analysing failure or faults in measured semiconductor device
摘要 The method involves setting a pre-determined two-dimensional position to a coordinate origin in the measured device (S1). An emission image is formed on operating the measured device using an emission analyser for detecting the emitting part of the measured device according to the emission imaging. The method further involves identifying emitted coordinates of the measured device which are the coordinates of the emitting region, from the coordinate origin with the position relationship between the emission image and the coordinate origin.
申请公布号 DE19708003(A1) 申请公布日期 1998.03.05
申请号 DE19971008003 申请日期 1997.02.27
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 YOSHIDA, EIJI, TOKIO/TOKYO, JP
分类号 G01R31/302;G01R31/311;H01L21/66;(IPC1-7):G01R31/302 主分类号 G01R31/302
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