发明名称 Solid state electrolytic capacitor
摘要 The solid state electrolytic capacitor has a substrate (12) of conducting silicon onto which is formed an isolating film (15) in which a number of contact holes are formed. Contact layers (18) are formed in the holes and have coatings of tantalum (17) and chips of sintered tantalum powder are in contact. A number of solid state electrolytic layers are isolated from the tantalum . A number of cover layers are formed on the surface with apertures. A common encapsulation is formed over the layers and an anode is made on the underside of the substrate.
申请公布号 DE19738149(A1) 申请公布日期 1998.03.05
申请号 DE19971038149 申请日期 1997.09.01
申请人 ROHM CO. LTD., KYOTO, JP 发明人 KURIYAMA, CHOJIRO, KYOTO, JP
分类号 H01G9/004;H01G9/00;H01G9/052;H01G9/08;H01G9/15;H01L21/20;(IPC1-7):H01G9/15;H01G9/042;H01G9/048;H01G9/012 主分类号 H01G9/004
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