发明名称 |
Solid state electrolytic capacitor |
摘要 |
The solid state electrolytic capacitor has a substrate (12) of conducting silicon onto which is formed an isolating film (15) in which a number of contact holes are formed. Contact layers (18) are formed in the holes and have coatings of tantalum (17) and chips of sintered tantalum powder are in contact. A number of solid state electrolytic layers are isolated from the tantalum . A number of cover layers are formed on the surface with apertures. A common encapsulation is formed over the layers and an anode is made on the underside of the substrate.
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申请公布号 |
DE19738149(A1) |
申请公布日期 |
1998.03.05 |
申请号 |
DE19971038149 |
申请日期 |
1997.09.01 |
申请人 |
ROHM CO. LTD., KYOTO, JP |
发明人 |
KURIYAMA, CHOJIRO, KYOTO, JP |
分类号 |
H01G9/004;H01G9/00;H01G9/052;H01G9/08;H01G9/15;H01L21/20;(IPC1-7):H01G9/15;H01G9/042;H01G9/048;H01G9/012 |
主分类号 |
H01G9/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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