Verfahren zum Planarisieren einer Substratoberfläche

摘要

In a process for smoothening a substrate surface with level differences caused by metallic structures, a metallic layer made of a titanium compound is first applied on the surface and the side faces of the metallic structures before O3-activated separation of SiO2 or SiOF from a silicium precursor stage on the substrate surface provided with the metallic structures.