Niedertemperatur-MOSFET-Source/Drain-Struktur mit ultrakurzem Kanal,申请号DE19936016728-传众专利搜索

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发明名称	Niedertemperatur-MOSFET-Source/Drain-Struktur mit ultrakurzem Kanal
摘要
申请公布号	DE69316728(D1)	申请公布日期	1998.03.05
申请号	DE19936016728	申请日期	1993.11.19
申请人	INTERNATIONAL BUSINESS MACHINES CORP., ARMONK, N.Y., US	发明人	SUBBANNA, SESHADRI, HOPEWELL JUNCTION, NY 12533, US
分类号	H01L21/336;H01L29/10;H01L29/78;(IPC1-7):H01L29/772;H01L29/43;H01L29/45;H01L27/092	主分类号	H01L21/336
代理机构		代理人
主权项
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