MONOLITHIC INTEGRATED CIRCUIT INCLUDING BIPOLAR TRANSISTORS HAVING NONUNIFORMLY DOPED COLLECTOR BASE JUNCTION

摘要

A bipolar junction device has a base region, an emitter region, and a collector region. The collector region has a nonuniform doping profile. A monolithic electronic integrated circuit comprises a bipolar transistor device having a collector base junction and a nonuniform doping profile in a collector region, and a diode having a doping profile that is substantially similar to the collector base junction of the transistor device. Advantageously, the electrical characteristics of the transistor device include relatively high gain and improved linearity. Advantageously, a bipolar junction device may also be monolithically fabricated with a varactor diode having a nonlinear capacitance as a function of applied voltage, to create a high performance voltage controlled oscillator.