| 摘要 |
<p>The invention concerns a method for obtaining at least one wafer in semiconducting material by shearing in a bar of semiconducting material (1).The shearing is carried out along a longitudinal plane of the bar to obtain a wafer (10) of large dimensions. The obtained wafer can be used for producing a substrate of the semiconductor on insulator type, for instance a Silicon On Insulator substrate.</p> |
