| 摘要 |
A method for forming shallow trench isolation structures is provided. The method comprises the following steps: providing a substrate with a "v" shaped trench, forming a first dielectric layer to cover the upper portion of the inner wall of the trench; conducting the first etching process to pull back the uncovered inner wall of the trench; removing the first dielectric layer; and forming a second dielectric layer to cover the trench and form a void inside the trench.
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