FABRICATION METHOD OF PHASE-CHANGE MEMORY DEVICE

摘要

A manufacturing method of a phase change memory device is provided to improve a switching property and an operation margin of a device by reducing a contact resistance of a PN diode and a semiconductor substrate. An interlayer insulation film(109) is formed on a semiconductor substrate(101) in which a contact region(105) is formed. A contact hole is formed by patterning the interlayer insulation film in order to expose the semiconductor substrate of a region in which a PN diode is to be formed. A first SEG(Selective Epitaxial Growth) layer(113) of a fixed height is formed inside the contact hole. The contact hole is filled by forming a second SEG layer(117) on the first SEG layer. The first SEG layer is a doped silicon layer. The first SEG layer has thickness of 300~500Å.