发明名称 MONOLITHIC PHOTO-DETECTOR ARRAY INTEGRATED WITH ROIC FOR LASER IMAGE SIGNAL DETECTION AND MANUFACTURING METHOD THEREOF
摘要 A photo detector array in which a readout IC is integrated for a laser image signal and a manufacturing method thereof are provided to simplify a manufacturing process by excluding a hybrid packaging process of a separate flip chip. A plurality of optical detection pixels(210) includes a photo diode and a first heterojunction bipolar transistor. The photo diode converts incident light energy into electrical energy. The first heterojunction bipolar transistor selectively converts the electrical energy of the photo diode into electrical signals. An output control circuit(220) includes a second heterojunction bipolar transistor which controls an output of the electrical signals transmitted from a plurality of optical detection pixels. The photo diode, the first heterojunction bipolar transistor, and the second heterojunction bipolar transistor are formed into a single chip integration type on a semi-insulation InP substrate.
申请公布号 KR20090060896(A) 申请公布日期 2009.06.15
申请号 KR20070127879 申请日期 2007.12.10
申请人 ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE 发明人 NAM, EUN SOO;OH, MYOUNG SOOK;KIM, HO YOUNG;CHONG, YOUNG JUN;YU, HYUN KYU
分类号 H01L27/14;H01L29/737 主分类号 H01L27/14
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