发明名称 |
Method for fabricating polycrystalline silicon having micro roughness on the surface |
摘要 |
A method for fabricating a polycrystalline silicon having a roughed surface, which is useful for a capacitor electrode is disclosed. The method is featured by depositing a polycrystalline silicon layer in such a manner that grains of silicon are caused at the surface of the polycrystalline silicon layer. The polycrystalline silicon layer thus obtained has a large effective area and is suitable for a capacitor electrode because of its increased effective surface area.
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申请公布号 |
US5723379(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19940177995 |
申请日期 |
1994.01.06 |
申请人 |
NEC CORPORATION |
发明人 |
WATANABE, HIROHITO;TATSUMI, TORU |
分类号 |
H01L21/02;H01L27/108;H01L29/92;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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