发明名称 |
Method for measuring the electrical potential in a semiconductor element |
摘要 |
Measuring an electrical potential in a semiconductor element by applying one or more voltages over the semiconductor element, placing one or more conductors in contact with the semi-conductor element using a scanning proximity microscope, calibrating the contact force between the conductors and the semiconductor element and measuring an electrical potential in the semi-conductor element with at least one of the conductors while injecting a substantially zero current in the semiconductor element. To measure the electrical potential distribution within the semiconductor, the position of at least one of the conductors is changed and the electric potential re-measured.
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申请公布号 |
US5723981(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19960673616 |
申请日期 |
1996.06.25 |
申请人 |
IMEC VZW |
发明人 |
HELLEMANS, LOUIS C.;TRENKLER, THOMAS;DE WOLF, PETER;VANDERVORST, WILFRIED |
分类号 |
G01Q60/40;G01Q10/00;G01Q60/24;G01Q60/30;H01L21/66;(IPC1-7):G01R31/26;H01J37/26 |
主分类号 |
G01Q60/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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