| 摘要 |
PROBLEM TO BE SOLVED: To prevent all wire deformation, island shift, unfilling, void and island shift generated at the time of transfer molding of a resin-sealed type semiconductor device. SOLUTION: Gates 2 are respectively provided at four corners of a cavity 4 of substantially square shape of a planar shape, and resin reservoir 3 are respectively provided substantially at central positions of cavities of upper and lower molds. Resins simultaneously press injected from the respective gates 2 are combined substantially at a center of the cavity 4. Since molten resin is combined with the resins press injected from the gates of symmetrical positions before the molten resin is brought into contact with a binding wire extended perpendicularly in its flowing direction, a wire deformation is eliminated. Even if a filling difference occurs between upper and lower resin flowing in the cavity, it is supported by the resins injected from the positions of diagonal positions, no island shift occurs. A moving distance of the resin until filling is completed from the gate is shortened, and the filling is completed before curing the resin, and hence no void or no unfilling occurs. |
