发明名称 |
Apparatus for analyzing thin film property |
摘要 |
A method and apparatus for measuring electrical characteristics of a thin surface layer of a sample such as a semiconductor element. A triangular pulse wave of is applied between the sample and a probe needle on a cantilever. By measuring current that flows through the thin surface layer of the sample using the probe needle, I/V characteristics are obtained. A control circuit keep constant the clearance between the probe needle and the thin surface layer of the sample by applying a voltage to a piezoelectric element that supports the sample. I/V characteristics are then measured at a plurality of test points on the thin surface layer of the sample.
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申请公布号 |
US5723982(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19950506856 |
申请日期 |
1995.07.25 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION |
发明人 |
YASUE, TAKAO;NISHIOKA, TADASHI |
分类号 |
G01R29/14;G01N27/92;G01N37/00;G01Q30/04;G01Q60/24;G01R31/26;G01R31/28;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
G01R29/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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