发明名称 Apparatus for analyzing thin film property
摘要 A method and apparatus for measuring electrical characteristics of a thin surface layer of a sample such as a semiconductor element. A triangular pulse wave of is applied between the sample and a probe needle on a cantilever. By measuring current that flows through the thin surface layer of the sample using the probe needle, I/V characteristics are obtained. A control circuit keep constant the clearance between the probe needle and the thin surface layer of the sample by applying a voltage to a piezoelectric element that supports the sample. I/V characteristics are then measured at a plurality of test points on the thin surface layer of the sample.
申请公布号 US5723982(A) 申请公布日期 1998.03.03
申请号 US19950506856 申请日期 1995.07.25
申请人 MITSUBISHI DENKI KABUSHIKI KAISHA;RYODEN SEMICONDUCTOR SYSTEM ENGINEERING CORPORATION 发明人 YASUE, TAKAO;NISHIOKA, TADASHI
分类号 G01R29/14;G01N27/92;G01N37/00;G01Q30/04;G01Q60/24;G01R31/26;G01R31/28;H01L21/66;(IPC1-7):G01R31/26 主分类号 G01R29/14
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