发明名称 |
Thin film transistor with vertical channel adjacent sidewall of gate electrode and method of making |
摘要 |
A thin film transistor and a method which forms a channel region (c), a lightly doped drain region (LDD) region and, optionally, an offset region (o), in a portion of a semiconductor layer which is adjacent a sidewall of the gate electrode without the use of photo masks, thereby increasing the permissible degree of miniaturization and improving production yield.
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申请公布号 |
US5723879(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19970788204 |
申请日期 |
1997.01.24 |
申请人 |
GOLDSTAR ELECTRON CO., LTD. |
发明人 |
CHO, SEOK WON;CHOI, JONG MOON |
分类号 |
H01L29/78;H01L21/336;H01L27/12;H01L29/786;(IPC1-7):H01L29/04;H01L31/036;H01L31/037;H01L31/20 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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