| 摘要 |
<p>A method for manufacturing an epitaxial wafer is provided to prevent friction between a susceptor and a rear edge part due to the bending of a silicon wafer by controlling the temperature of a susceptor when loading the silicon wafer on a reactive container. An epitaxial layer is formed in a surface of a silicon wafer(21) arranged inside a reactive container(20) by circulating the source gas in the reactive container. The temperature of a susceptor(24) is controlled according to the resistivity of the silicon wafer when loading the silicon wafer on the reactive container.</p> |
