发明名称 High-density wirebond chip interconnect for multi-chip modules
摘要 A multi-chip module including a multi-layer substrate and a patterned metallization layer formed on each layer of the substrate. A multi-tiered cavity is formed with an integrated circuit (IC) mounting surface at the bottom of the multi-tiered cavity. A plurality of ICs are mounted on the IC mounting surface of the cavity. A first set of wire bonds extends from at least one IC to the exposed portions of patterned metallization of at least two tiers of the multi-tiered cavity. A second set of wire bonds extends from the at least one IC to bond pads of an adjacent IC. A third set of wire bonds extends from the at least one IC to bond pads of the adjacent IC such that the third set of wire bonds has a higher loop height than the second set of wire bonds.
申请公布号 US5723906(A) 申请公布日期 1998.03.03
申请号 US19960657582 申请日期 1996.06.07
申请人 HEWLETT-PACKARD COMPANY 发明人 RUSH, KENNETH
分类号 H01L25/00;H01L21/60;H01L23/52;H01L25/065;(IPC1-7):H01L23/16;H01L27/10;H01L23/48;H01L23/055 主分类号 H01L25/00
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