发明名称 |
High-density wirebond chip interconnect for multi-chip modules |
摘要 |
A multi-chip module including a multi-layer substrate and a patterned metallization layer formed on each layer of the substrate. A multi-tiered cavity is formed with an integrated circuit (IC) mounting surface at the bottom of the multi-tiered cavity. A plurality of ICs are mounted on the IC mounting surface of the cavity. A first set of wire bonds extends from at least one IC to the exposed portions of patterned metallization of at least two tiers of the multi-tiered cavity. A second set of wire bonds extends from the at least one IC to bond pads of an adjacent IC. A third set of wire bonds extends from the at least one IC to bond pads of the adjacent IC such that the third set of wire bonds has a higher loop height than the second set of wire bonds.
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申请公布号 |
US5723906(A) |
申请公布日期 |
1998.03.03 |
申请号 |
US19960657582 |
申请日期 |
1996.06.07 |
申请人 |
HEWLETT-PACKARD COMPANY |
发明人 |
RUSH, KENNETH |
分类号 |
H01L25/00;H01L21/60;H01L23/52;H01L25/065;(IPC1-7):H01L23/16;H01L27/10;H01L23/48;H01L23/055 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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