Method of forming interconnection

摘要

A method of forming an interconnection in a contact hole having a high aspect ratio, which is capable of certainly forming a barrier layer metal layer and burying a blanket W film in the contact hole without generation of any void. A Ti film is deposited in a contact hole by sputtering using a sputter system having a collimator plate and an oxidation preventive TiN thin film is deposited thereon by reactive sputtering using the same sputter system having the collimator plate. Next, a titanium silicide layer is formed by a first heat-treatment and a TiN film is formed by a second heat-treatment. Finally, a blanket W film is deposited by CVD to be buried in the contact hole.