| 摘要 |
The invention provides a semiconductor device (2) with a passivation film (3 ,9) provided on a surface thereof, said passivation film (3,9) comprising a SiON layer (4, 10) being in contact with the surface of said semiconductor device (2), and a Si3N4 layer (5,11) provided at the outer side of said SiON layer (4,10 ), chraracterized in that said passivation film (3,9) has an outermost layer (1 1) of Si3N4 and said outermost layer (11) has a portion being in contact with said semiconductor device (2), or the exposed area (111, 112) of said SiON layer (107) is nitrided. The semiconductor device has a high bonding strength between the passivation film and the semiconductor device and high moisture resistance.
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