发明名称 Silicon carbide gemstones
摘要 Synthetic gemstones having extraordinary brilliance and hardness are formed from large single crystals of relatively low impurity, translucent silicon carbide of a single polytype that are grown in a furnace sublimation system. The crystals are cut into rough gemstones that are thereafter fashioned into finished gemstones. A wide range of colors and shades is available by selective doping of the crystal during growth. A colorless gemstone is produced by growing the crystal undoped in a system substantially free of unwanted impurity atoms.
申请公布号 US5723391(A) 申请公布日期 1998.03.03
申请号 US19960739784 申请日期 1996.10.30
申请人 C3, INC. 发明人 HUNTER, CHARLES ERIC;VERBIEST, DIRK
分类号 C30B29/36;A44C17/00;C01B31/36;C01B33/00;C30B23/00;C30B33/00;(IPC1-7):C30B29/36;C04B35/565 主分类号 C30B29/36
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