| 发明名称 |
PROCESSES FOR CLEANING AND STRIPPING PHOTORESIST FROM SURFACES OF SEMICONDUCTOR WAFERS |
| 摘要 |
A method for removing a resist layer, particularly in via holes, includes plasma to remove organic compounds, rinsing the device in deionized water, and sputtering with argon to remove inorganic compounds. The order of rinsing and sputtering can be reversed. These methods avoid the use of acids and industrial solvents. |
| 申请公布号 |
WO9741488(A3) |
申请公布日期 |
1998.02.26 |
| 申请号 |
WO1997US06692 |
申请日期 |
1997.04.23 |
| 申请人 |
ULVAC TECHNOLOGIES, INC. |
发明人 |
BERSIN, RICHAED, L.;XU, HAN |
| 分类号 |
H01L21/302;G03F7/42;H01L21/02;H01L21/027;H01L21/3065;H01L21/3213 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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