发明名称 Packaging carrier and manufacturing method thereof and chip package structure
摘要 A packaging carrier includes an interposer, a dielectric layer and a built-up structure. The interposer has a first surface and a second surface opposite to each other, and a plurality of first pads and second pads located on the first surface and the second surface, respectively. The dielectric layer has a third surface and a fourth surface opposite to each other. The interposer is embedded in the dielectric layer. The second surface of the interposer is not covered by the fourth surface of the dielectric layer, and has a height difference with the fourth surface. The built-up structure is disposed on the third surface of the dielectric layer and electrically connected to the first pads of the interposer.
申请公布号 US9374896(B2) 申请公布日期 2016.06.21
申请号 US201314038769 申请日期 2013.09.27
申请人 Unimicron Technology Corp. 发明人 Chen Ming-Chih;Hu Dyi-Chung
分类号 H05K1/16;H05K1/11;H05K3/40;H05K3/46 主分类号 H05K1/16
代理机构 Jianq Chyun IP Office 代理人 Jianq Chyun IP Office
主权项 1. A packaging carrier, comprising: an interposer, having a first surface and a second surface opposite to each other, and a plurality of first pads and second pads located on the first surface and the second surface, respectively; a dielectric layer, having a third surface and a fourth surface opposite to each other, wherein the interposer is embedded in the dielectric layer, the second surface of the interposer is not covered by the fourth surface of the dielectric layer and has a height difference with the fourth surface; and a built-up structure, disposed on the third surface of the dielectric layer and electrically connected to the first pads of the interposer, wherein the built-up structure only comprises a first circuit layer, at least an insulating layer, at least a second circuit layer, a plurality of first conductive vias and a plurality of second conductive vias, the first circuit layer is disposed on the third surface of the dielectric layer, and the first circuit layer is electrically connected to the first pads of the interposer through the first conductive vias, the insulating layer covers the first circuit layer and the third surface of the dielectric layer, the second circuit layer is disposed on a surface of the insulating lager relatively away from the third surface, the second conductive vias penetrate the insulating layer and electrically connect the first circuit layer and the second circuit layer, and the dielectric layer only covers a portion of the built-up structure by the third surface of the dielectric layer; wherein the interposer comprises a plurality of through vias, and each through via is filled with a conductive material and electrically connects the corresponding first pad and the corresponding second pad; and wherein the interposer comprises a first interposer layer, a second interposer layer and a third interposer layer, the first interposer layer is located between the second interposer layer and the third interposer layer, and the through vias at least comprises a plurality of first through vias passing through the first interposer layer and filled with the conductive material, two surfaces opposite to each other of the first interposer layer are aligned with two ends of each of the first through vias filled with the conductive material, and the second interposer layer and the third interposer layer respectively have the first surface and the second surface, and a material of the first interposer layer comprises silicon, glass or ceramic; materials of the second interposer layer and the third interposer layer are selected from glass, ceramic, polyimide (PI), polybenzoxazole (PBO) fiber, bis-benzocyclobuten (BCB), silicones, acrylates or epoxy.
地址 Taoyuan TW