| 摘要 |
<p>A method for determining data stored by a memory cell (35). The memory cell (35) has a select gate coupled to a wordline (40), a first electrode coupled to a bitline (45), and a second electrode coupled to a conductor. The method comprises floating the bitline (45); applying a first voltage (Vg) to the wordline (40); applying a second voltage (Vs) to the conductor such that the bitline is set to a third voltage (Vg-Vt) that is equal to the first voltage (Vg) minus a threshold voltage (Vt) of the memory cell (35); and sensing the third voltage (Vg-Vt) to determine the data stored by the memory cell (35).</p> |
