Fet structure for minimum size length/width devices for performance boost and mismatch reduction

摘要

Methods for preparing CMOS transistors having longer effective gate lengths and the resulting devices are disclosed. Embodiments include forming a dummy gate bound by spacers on opposing sides thereof, on a substrate; removing the dummy gate to form a trench between the spacers; modifying a gate channel portion of the substrate between the spacers to form inner or outer sidewalls; depositing a conformal high-k dielectric layer on the modified gate channel portion; and forming a metal gate in the trench.

主权项

1. A method, comprising:
forming a dummy gate bound by spacers on opposing sides thereof, on a substrate; removing the dummy gate to form a trench between the spacers; modifying a gate channel portion of the substrate by anisotropically wet etching the gate channel portion of the substrate to form a concave channel with inner sidewalls; depositing a conformal high-k dielectric layer on the modified gate channel portion; and forming a metal gate in the trench.