THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, ARRAY SUBSTRATE AND DISPLAY DEVICE

摘要

A thin-film transistor and a manufacturing method therefor, an array substrate and a display device. The thin-film transistor comprises: an active layer (30), a source-drain metal layer (56) and a diffusion barrier layer (78) located between the active layer (30) and the source-drain metal layer, the source-drain metal layer comprising a source electrode (50) and a drain electrode (60), the diffusion barrier layer (78) comprising a source barrier portion (70) corresponding to the position of the source electrode and a drain barrier portion (80) corresponding to the position of the drain electrode, and nitrogen of different concentrations being doped in the diffusion barrier layer from one side close to the source-drain metal layer to one side close to the active layer. The thin-film transistor, the array substrate comprising the thin-film transistor and the display device can solve the problem in the prior art that the effect of preventing metal diffusion by the diffusion barrier layer is not good.