发明名称 |
Circuitry for controlling a threshold voltage in a flash memory cell |
摘要 |
The circuit for controlling the threshold voltage in the flash memory cell according to the present invention comprises a circuit for generating a first voltage depending on the amount of a drain current in the memory cell; a first element for comparing the first voltage with a reference voltage and for generating a second voltage; and a second element for supplying a control gate voltage for the control gate of the memory cell depending on the second voltage.
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申请公布号 |
US5721705(A) |
申请公布日期 |
1998.02.24 |
申请号 |
US19960769507 |
申请日期 |
1996.12.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
HONG, SOON WON;SONE, JAE HYUN |
分类号 |
G11C17/00;G11C16/02;G11C16/34;G11C17/18;(IPC1-7):G11C16/06 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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