METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To prevent the occurrence of a flicker and a display damage by forming a picture element electrode connected to a thin film transistor on a flattening organic resin layer. SOLUTION: A photoresist 53 having a pattern where only source/drain areas are opened is formed by using a mask P1. An n-type silicon film 54 is generated on the resist by a plasma CVD method. Furthermore, the resist 53 is removed by a lift-off method and the source/drain areas 55 and 56 are formed. A p-type active layer is formed by the similar process. Then, source/drain areas 59 and 60 are formed by using the lift off method in the similar way as an N area. Then, a silicon film 52 is etched by using a mask P3 and island areas 63 and 64 for N and P-channel thin film transistors are formed. Then, the source/drain areas are annealed by using an XeCl excimer laser. At the same time, laser doping is executed on the active layer. Finally, gate electrodes 66 and 67 are formed.